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IRF6622TR1PBF

IRF6622TR1PBF

IRF6622TR1PBF

Infineon Technologies

MOSFET N-CH 25V 15A DIRECTFET

SOT-23

IRF6622TR1PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric SQ
Number of Pins 5
Supplier Device Package DIRECTFET™ SQ
Operating Temperature -40°C~150°C TJ
Packaging Cut Tape (CT)
Published 2006
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 6.3MOhm
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Voltage - Rated DC 25V
Technology MOSFET (Metal Oxide)
Current Rating 15A
Power Dissipation-Max 2.2W Ta 34W Tc
Power Dissipation 34W
Turn On Delay Time 9.4 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1450pF @ 13V
Current - Continuous Drain (Id) @ 25°C 15A Ta 59A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Rise Time 16ns
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.6 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 25V
Input Capacitance 1.45nF
Drain to Source Resistance 8.9mOhm
Rds On Max 6.3 mΩ
Nominal Vgs 1.8 V
Height 506μm
Length 4.826mm
Width 3.95mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.959693 $0.959693
10 $0.905371 $9.05371
100 $0.854123 $85.4123
500 $0.805777 $402.8885
1000 $0.760167 $760.167

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