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FQB3N90TM

FQB3N90TM

FQB3N90TM

ON Semiconductor

MOSFET N-CH 900V 3.6A D2PAK

SOT-23

FQB3N90TM Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK (TO-263AB)
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2000
Series QFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.13W Ta 130W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.25Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 910pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.6A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Drain to Source Voltage (Vdss) 900V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V

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