FQB6N60CTM

new-10%

Manufacturer part number:FQB6N60CTM

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 600V 5.5A D2PAK

Case Package:SOT-23

Datasheet:FQB6N60CTM Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	D2PAK (TO-263AB)
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	125W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2Ohm @ 2.75A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	810pF @ 25V
Current - Continuous Drain (Id) @ 25°C	5.5A Tc
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V