FQB7P06TM

new-10%

Manufacturer part number:FQB7P06TM

Manufacturer:ON Semiconductor

Description:MOSFET P-CH 60V 7A D2PAK

Case Package:SOT-23

Datasheet:FQB7P06TM Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	D2PAK (TO-263AB)
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2001
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Voltage - Rated DC	-60V
Technology	MOSFET (Metal Oxide)
Current Rating	-7A
Power Dissipation-Max	3.75W Ta 45W Tc
Element Configuration	Single
Power Dissipation	3.75W
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	410mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	295pF @ 25V
Current - Continuous Drain (Id) @ 25°C	7A Tc
Gate Charge (Qg) (Max) @ Vgs	8.2nC @ 10V
Rise Time	50ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	7.5 ns
Continuous Drain Current (ID)	7A
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	-60V
Input Capacitance	295pF
Drain to Source Resistance	410mOhm
Rds On Max	410 mΩ
RoHS Status	RoHS Compliant
Lead Free	Lead Free