CSD18532Q5BT

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CSD18532Q5BT

Manufacturer part number:CSD18532Q5BT

Manufacturer:Texas Instruments

Description:CSD18532Q5BT datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

Case Package:SOT-23

Datasheet:CSD18532Q5BT Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 5 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	CSD18532
Number of Elements	1
Power Dissipation-Max	3.2W Ta 156W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	5.8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.2m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5070pF @ 30V
Current - Continuous Drain (Id) @ 25°C	100A Ta
Gate Charge (Qg) (Max) @ Vgs	58nC @ 10V
Rise Time	7.2ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	3.1 ns
Turn-Off Delay Time	22 ns
Continuous Drain Current (ID)	100A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	23A
Drain-source On Resistance-Max	0.0043Ohm
Pulsed Drain Current-Max (IDM)	400A
DS Breakdown Voltage-Min	60V
Avalanche Energy Rating (Eas)	320 mJ
Feedback Cap-Max (Crss)	17 pF
Length	5mm
Width	6mm
Thickness	950μm
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead