FQD2N90TF

new-10%

Manufacturer part number:FQD2N90TF

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 900V 1.7A DPAK

Case Package:SOT-23

Datasheet:FQD2N90TF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	260.37mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Voltage - Rated DC	900V
Technology	MOSFET (Metal Oxide)
Current Rating	1.7A
Number of Elements	1
Power Dissipation-Max	2.5W Ta 50W Tc
Element Configuration	Single
Power Dissipation	2.5W
Turn On Delay Time	15 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	7.2 Ω @ 850mA, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	500pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.7A Tc
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Rise Time	35ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	1.7A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	900V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free