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FDD8447L

FDD8447L

FDD8447L

ON Semiconductor

FDD8447L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDD8447L Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 8.5MOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 40V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating 54A
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 3.1W Ta 44W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.8W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.5m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1970pF @ 20V
Current - Continuous Drain (Id) @ 25°C 15.2A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 15.2A
Threshold Voltage 1.9V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Nominal Vgs 1.9 V
Height 2.39mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.44776 $0.89552
5,000 $0.42661 $2.13305
12,500 $0.41150 $4.938
25,000 $0.40930 $10.2325
FDD8447L Product Details

FDD8447L Description

 

FDD8447L N Channel MOSFET is created using a sophisticated PowerTrench process. FDD8447L MOSFET was specifically developed to decrease the resistance to on-state. FDD8447L circuit is maintaining the highest quality and switching capabilities required for industrial applications.

 

 

FDD8447L Features

 

Max rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 36 A

Fast Switching Speed

Low Gate Charge

High Performance Trench Technology for Extremely Low rDS(on)

High Power and Current Handling Capability

RoHS Compliant

 

 

FDD8447L Applications

 

Industrial Motor Drive

Industrial Power Supplies

Industrial Automation

Battery Protection

Uninterruptible Power Supplies

 


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