SSM3K15AFS,LF Overview

The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 13.5pF @ 3V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 100mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (2.5V 4V), this device helps reduce its overall power consumption.

SSM3K15AFS,LF Features

a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 30V voltage

SSM3K15AFS,LF Applications

There are a lot of Toshiba Semiconductor and Storage
SSM3K15AFS,LF applications of single MOSFETs transistors.

• LCD/LED TV
• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools