FQI1P50TU

new-10%

Manufacturer part number:FQI1P50TU

Manufacturer:ON Semiconductor

Description:Trans MOSFET P-CH 500V 1.5A 3-Pin(3+Tab) I2PAK T/R

Case Package:SOT-23

Datasheet:FQI1P50TU Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Voltage - Rated DC	-500V
Technology	MOSFET (Metal Oxide)
Current Rating	-1.5A
Power Dissipation-Max	3.13W Ta 63W Tc
Element Configuration	Single
Power Dissipation	3.13W
Turn On Delay Time	9 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	10.5 Ω @ 750mA, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	350pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.5A Tc
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
Rise Time	25ns
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	27 ns
Continuous Drain Current (ID)	1.5A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	-500V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free