FQI27N25TU-F085

new-10%

Manufacturer part number:FQI27N25TU-F085

Manufacturer:ON Semiconductor

Description:MOSFET 250V 0.11OHM 25.5A N-CH MOSFET

Case Package:SOT-23

Datasheet:FQI27N25TU-F085 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 3 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Weight	2.084g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	Automotive, AEC-Q101
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	MATTE TIN
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	3.13W Ta 417W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.13W
Turn On Delay Time	36 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	110m Ω @ 12.75A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1800pF @ 25V
Current - Continuous Drain (Id) @ 25°C	25.5A Tc
Gate Charge (Qg) (Max) @ Vgs	65nC @ 10V
Rise Time	164ns
Drain to Source Voltage (Vdss)	250V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	77 ns
Turn-Off Delay Time	81 ns
Continuous Drain Current (ID)	25.5A
Gate to Source Voltage (Vgs)	30V
DS Breakdown Voltage-Min	250V
Avalanche Energy Rating (Eas)	600 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free