FQP10N60C

new-10%

Manufacturer part number:FQP10N60C

Manufacturer:ON Semiconductor

Description:FQP10N60C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FQP10N60C Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	1.8g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2007
Series	QFET®
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
Resistance	730mOhm
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Current Rating	9.5A
Number of Elements	1
Power Dissipation-Max	156W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	156W
Turn On Delay Time	23 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	730m Ω @ 4.75A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2040pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9.5A Tc
Gate Charge (Qg) (Max) @ Vgs	57nC @ 10V
Rise Time	69ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	77 ns
Turn-Off Delay Time	144 ns
Continuous Drain Current (ID)	9.5A
Threshold Voltage	4V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
Dual Supply Voltage	600V
Avalanche Energy Rating (Eas)	700 mJ
Nominal Vgs	4 V
Height	8.79mm
Length	10.36mm
Width	4.67mm
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free