APT20M22JVRU2

new-10%

Manufacturer part number:APT20M22JVRU2

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 200V 97A SOT-227

Case Package:SOT-23

Datasheet:APT20M22JVRU2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2006
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	450W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	450W
Case Connection	ISOLATED
Turn On Delay Time	16 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	22m Ω @ 48.5A, 10V
Vgs(th) (Max) @ Id	4V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds	8500pF @ 25V
Current - Continuous Drain (Id) @ 25°C	97A Tc
Gate Charge (Qg) (Max) @ Vgs	290nC @ 10V
Rise Time	25ns
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	48 ns
Continuous Drain Current (ID)	97A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.022Ohm
Pulsed Drain Current-Max (IDM)	388A
DS Breakdown Voltage-Min	200V
Avalanche Energy Rating (Eas)	2500 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant