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FQP18N50V2

FQP18N50V2

FQP18N50V2

ON Semiconductor

FQP18N50V2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FQP18N50V2 Datasheet

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Series QFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Resistance 265mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Current Rating 18A
Number of Elements 1
Power Dissipation-Max 208W Tc
Element Configuration Single
Power Dissipation 208W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 265mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3290pF @ 25V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Rise Time 150ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 110 ns
Turn-Off Delay Time 95 ns
Continuous Drain Current (ID) 18A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Dual Supply Voltage 500V
Input Capacitance 3.29nF
Drain to Source Resistance 225mOhm
Rds On Max 265 mΩ
Nominal Vgs 5 V
Width 10.67mm
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.475219 $0.475219
10 $0.448320 $4.4832
100 $0.422943 $42.2943
500 $0.399003 $199.5015
1000 $0.376418 $376.418
FQP18N50V2 Product Details

FQP18N50V2 Description


The N-Channel enhancement mode power field-effect transistors were created utilizing the exclusive planar stripe DMOS process developed by Fairchild.

In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high energy pulses. These devices are excellent for active power factor correction, electronic light ballasts based on half bridge architecture, and high efficiency switching mode power supply.



FQP18N50V2 Features


  • 550V @TJ = 150°C

  • Typ. RDS(on) = 0.265? @VGS = 10 V

  • Low gate charge (typical 42 nC)

  • Low Crss (typical 11 pF)

  • Fast switching

  • 100% avalanche tested

  • Improved dv/dt capability



FQP18N50V2 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial

  • Switching applications


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