FQP19N10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FQP19N10 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2000
Series
QFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
75W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
100mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
780pF @ 25V
Current - Continuous Drain (Id) @ 25°C
19A Tc
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
FQP19N10 Product Details
FQP19N10 Description
FQP19N10 N-Channel MOSFET is to be used in a variety of applications. FQP19N10 MOSFET is ideal for reducing resistance to on-state and offering better switching performance as well as being able to provide high avalanche energy. ON Semiconductor FQP19N10 is widely used in switched-mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.