Welcome to Hotenda.com Online Store!

logo
userjoin
Home

FQP19N10

FQP19N10

FQP19N10

ON Semiconductor

FQP19N10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FQP19N10 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2000
Series QFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 75W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 100mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 780pF @ 25V
Current - Continuous Drain (Id) @ 25°C 19A Tc
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
FQP19N10 Product Details

FQP19N10 Description

 

FQP19N10 N-Channel MOSFET is to be used in a variety of applications. FQP19N10 MOSFET is ideal for reducing resistance to on-state and offering better switching performance as well as being able to provide high avalanche energy. ON Semiconductor FQP19N10 is widely used in switched-mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.

 

 

FQP19N10 Features

 

Low gate charge

Low Crss

13.6A, 100V, RDS(on) = 100mΩ

100% avalanche tested

Maximum junction temperature rating: 175°C

 

 

FQP19N10 Applications

 

Audio amplifier

Switching power applications

DC motor control

High-voltage applications


Related Part Number

ZVP4424GTC
IXFE44N50QD2
IXFE44N50QD2
$0 $/piece
SI1405DL-T1-GE3
BSS138LT1
BSS138LT1
$0 $/piece
STD5N20T4
STD5N20T4
$0 $/piece
IRLR8256PBF
AUIRLR024N
IRF7424TR
SI1426DH-T1-GE3

Get Subscriber

Enter Your Email Address, Get the Latest News