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FQP22P10

FQP22P10

FQP22P10

ON Semiconductor

FQP22P10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

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FQP22P10 Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2002
Series QFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 125W Tc
FET Type P-Channel
Rds On (Max) @ Id, Vgs 125mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 22A Tc
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
FQP22P10 Product Details

FQP22P10   Description

  These P-channel enhanced mode power field effect transistors are produced by Xiantong's proprietary planar stripe DMOS technology. This advanced technology is specifically tailored to minimize on-resistance, provide excellent switching performance, and withstand high-energy pulses in avalanche and rectifier modes. These devices are ideal for low-voltage applications such as audio amplifiers, high-efficiency switching DC/DC converters and DC motor controls.


FQP22P10   Features


? -22A, -100V, RDS(on) = 0.125? @VGS = -10 V

? Low gate charge ( typical 40 nC)

? Low Crss ( typical 160 pF)

? Fast switching

? 100% avalanche tested

? Improved dv/dt capability

? 175°C maximum junction temperature rating

 

 

FQP22P10     Applications


 audio amplifiers

 high-efficiency switching DC

DC converters

DC motor controls

 





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