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FQP4N20

  • FQP4N20
  • FQP4N20

FQP4N20

FQP4N20

ON Semiconductor

FQP4N20 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FQP4N20 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 45W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.4 Ω @ 1.8A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 220pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.6A Tc
Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 3.6A
Pulsed Drain Current-Max (IDM) 15.2A
DS Breakdown Voltage-Min 200V
Avalanche Energy Rating (Eas) 52 mJ
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.31000 $0.31
500 $0.3069 $153.45
1000 $0.3038 $303.8
1500 $0.3007 $451.05
2000 $0.2976 $595.2
2500 $0.2945 $736.25
FQP4N20 Product Details

FQP4N20 Description


FQP4N20 is a 200v N-Channel Logic Level QFET? Power MOSFET. The N-Channel enhancement mode power field effect transistor FQP4N20 is produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology is specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. The onsemi FQP4N20 is well suited for high-efficiency switching DC/DC converters, switch-mode power supplies, and motor control.



FQP4N20 Features


  • 3.8 A, 200 V, RDS(on) = 1.35 Ω (Max.) @ VGS = 10 V, ID = 1.9 A

  • Low Gate Charge (Typ. 4.0 nC)

  • Low Crss (Typ. 6.0 pF)

  • 100% Avalanche Tested

  • Drain-Source Voltage: 200v



FQP4N20 Applications


  • High-efficiency switching DC/DC converters

  • Switch-mode power supplies

  • Motor control

  • Brushless DC Motor Applications

  • DC Motor Applications

  • AC Motor Applications


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