FDC606P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDC606P Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Number of Pins
6
Weight
36mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2001
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
26MOhm
Subcategory
Other Transistors
Voltage - Rated DC
-12V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
-6A
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
1.6W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.6W
Turn On Delay Time
11 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
26m Ω @ 6A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1699pF @ 6V
Current - Continuous Drain (Id) @ 25°C
6A Ta
Gate Charge (Qg) (Max) @ Vgs
25nC @ 4.5V
Rise Time
10ns
Drain to Source Voltage (Vdss)
12V
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Vgs (Max)
±8V
Fall Time (Typ)
70 ns
Turn-Off Delay Time
89 ns
Continuous Drain Current (ID)
-6A
Threshold Voltage
-500mV
Gate to Source Voltage (Vgs)
8V
Drain Current-Max (Abs) (ID)
6A
Drain to Source Breakdown Voltage
-12V
Dual Supply Voltage
-12V
Max Junction Temperature (Tj)
150°C
Nominal Vgs
-500 mV
Height
1.1mm
Length
3mm
Width
1.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:16493 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.397966
$0.397966
10
$0.375440
$3.7544
100
$0.354189
$35.4189
500
$0.334140
$167.07
1000
$0.315227
$315.227
FDC606P Product Details
FDC606P Description
The low voltage PowerTrench technology is used in the FDC606P P-Channel 1.8V MOSFET. The FDC606P MOSFET has been designed with battery power control in mind.
FDC606P Features
-6 A, -12V
RDS(on) = 26 mΩ@ VGS = -4.5 V
RDS(on) = 35 mΩ@ VGS = -2.5 V
RDS(on) = 53 mΩ@ VGS = -1.8 V
Fast switching speed
High power and current handling capability
FDC606P Applications
Battery management
Load switch
Battery protection
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