IRF530NPBF

new-10%

IRF530NPBF

Manufacturer part number:IRF530NPBF

Manufacturer:Infineon Technologies

Description:MOSFET (Metal Oxide) N-Channel Tube 90m Ω @ 9A, 10V ±20V 920pF @ 25V 37nC @ 10V TO-220-3

Case Package:SOT-23

Datasheet:IRF530NPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	HEXFET®
Published	2001
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Resistance	90MOhm
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY
Subcategory	FET General Purpose Power
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	250
Current Rating	17A
Time@Peak Reflow Temperature-Max (s)	30
Lead Pitch	2.54mm
Number of Elements	1
Power Dissipation-Max	70W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	70W
Case Connection	DRAIN
Turn On Delay Time	9.2 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	90m Ω @ 9A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	920pF @ 25V
Current - Continuous Drain (Id) @ 25°C	17A Tc
Gate Charge (Qg) (Max) @ Vgs	37nC @ 10V
Rise Time	22ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	17A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	60A
Dual Supply Voltage	100V
Recovery Time	140 ns
Nominal Vgs	4 V
Height	8.77mm
Length	10.5156mm
Width	4.69mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free