FQP85N06

new-10%

Manufacturer part number:FQP85N06

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) N-Channel Tube 10m Ω @ 42.5A, 10V ±25V 4120pF @ 25V 112nC @ 10V TO-220-3

Case Package:SOT-23

Datasheet:FQP85N06 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Factory Lead Time	5 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	4.535924g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	QFET®
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	10MOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	85A
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Qualification Status	Not Qualified
Number of Elements	1
Voltage	60V
Power Dissipation-Max	160W Tc
Element Configuration	Single
Current	85A
Operating Mode	ENHANCEMENT MODE
Power Dissipation	160W
Turn On Delay Time	40 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	10m Ω @ 42.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4120pF @ 25V
Current - Continuous Drain (Id) @ 25°C	85A Tc
Gate Charge (Qg) (Max) @ Vgs	112nC @ 10V
Rise Time	230ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	170 ns
Turn-Off Delay Time	175 ns
Continuous Drain Current (ID)	85A
Threshold Voltage	4V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	60V
Dual Supply Voltage	60V
Nominal Vgs	4 V
Height	9.4mm
Length	10.1mm
Width	4.7mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free