FQP85N06 Description
The FQP85N06 is a TO-220 packaging through-hole 60V N channel enhancement mode power QFET MOSFET. This device uses planar stripe and DMOS technology that has been specifically designed to reduce on-state resistance, improve switching performance, and increase avalanche energy strength. It can be used in applications such as switch-mode power supplies, audio amplifiers, DC motor control, and variable switching power.
FQP85N06 Features
Gate to source voltage of ±25V
Continuous drain current (Id) of 85A
Power dissipation (Pd) of 160W
The low gate charge is typical 86nC
Low reverse transfer capacitance of typically 165pF
Drain to source voltage (Vds) of 60V
Low on-state resistance of 800mohm at Vgs 10V
Operating temperature range from -55°C to 175°C
FQP85N06 Applications
