STL11N65M5

new-10%

Manufacturer part number:STL11N65M5

Manufacturer:STMicroelectronics

Description:STL11N65M5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STL11N65M5 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	MDmesh™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	QUAD
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STL11
JESD-30 Code	S-XQFP-F5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	70W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	530m Ω @ 4.25A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	644pF @ 100V
Current - Continuous Drain (Id) @ 25°C	8.5A Tc
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Continuous Drain Current (ID)	8.5A
Drain-source On Resistance-Max	0.53Ohm
Pulsed Drain Current-Max (IDM)	34A
DS Breakdown Voltage-Min	650V
Avalanche Energy Rating (Eas)	130 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free