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TK46A08N1,S4X

TK46A08N1,S4X

TK46A08N1,S4X

Toshiba Semiconductor and Storage

MOSFET N-CH 80V 46A TO-220

SOT-23

TK46A08N1,S4X Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 6.000006g
Operating Temperature 150°C TJ
Packaging Tube
Published 2014
Series U-MOSVIII-H
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 35W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 30 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.4m Ω @ 23A, 10V
Vgs(th) (Max) @ Id 4V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 40V
Current - Continuous Drain (Id) @ 25°C 46A Tc
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
Rise Time 11ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 17 ns
Turn-Off Delay Time 51 ns
Continuous Drain Current (ID) 46A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 80A
Drain to Source Breakdown Voltage 80V
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.884966 $0.884966
10 $0.834874 $8.34874
100 $0.787617 $78.7617
500 $0.743035 $371.5175
1000 $0.700976 $700.976

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