FQPF12P20 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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FQPF12P20 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220F
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2000
Series
QFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
50W Tc
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
470mOhm @ 3.65A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C
7.3A Tc
Gate Charge (Qg) (Max) @ Vgs
40nC @ 10V
Drain to Source Voltage (Vdss)
200V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
FQPF12P20 Product Details
FQPF12P20 Description
These P-channel enhanced mode power field effect transistors are produced using Xiantong's proprietary planar stripe DMOS technology. This advanced technology is specifically tailored to minimize on-resistance, provides excellent switching performance, and can withstand high-energy pulses in AVA anchoring and rectifying modes. These devices are suitable for high efficiency switching DC/DC converters.