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FQPF12P20

FQPF12P20

FQPF12P20

ON Semiconductor

FQPF12P20 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FQPF12P20 Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220F
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series QFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 50W Tc
FET Type P-Channel
Rds On (Max) @ Id, Vgs 470mOhm @ 3.65A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.3A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
FQPF12P20 Product Details

FQPF12P20  Description

 

  These P-channel enhanced mode power field effect transistors are produced using Xiantong's proprietary planar stripe DMOS technology. This advanced technology is specifically tailored to minimize on-resistance, provides excellent switching performance, and can withstand high-energy pulses in AVA anchoring and rectifying modes. These devices are suitable for high efficiency switching DC/DC converters.

 

FQPF12P20    Features


·-7.3A-200VRDS(on)=0.47Ω@VGs=-10V.

Low gate charge(typical 31nC)

·Low Crss(typical 30 pF)

·Fast switching

100% avalanche tested

· Improved dv/dt capability

 

FQPF12P20    Applications


high efficiency switching DC

DC converters

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