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FQPF1N50

FQPF1N50

FQPF1N50

ON Semiconductor

MOSFET N-CH 500V 0.9A TO-220F

SOT-23

FQPF1N50 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series QFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Current Rating 1.4A
Power Dissipation-Max 16W Tc
Element Configuration Single
Power Dissipation 16W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9 Ω @ 450mA, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V
Current - Continuous Drain (Id) @ 25°C 900mA Tc
Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 10V
Rise Time 25ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 8 ns
Continuous Drain Current (ID) 900mA
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
RoHS Status RoHS Compliant
Lead Free Lead Free

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