FQPF6N60C

new-10%

Manufacturer part number:FQPF6N60C

Manufacturer:ON Semiconductor

Description:FQPF6N60C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FQPF6N60C Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Weight	2.27g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	Through Hole
Resistance	2Ohm
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Current Rating	5.5A
Number of Elements	1
Power Dissipation-Max	40W Tc
Element Configuration	Single
Power Dissipation	40W
Turn On Delay Time	15 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2 Ω @ 2.75A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	810pF @ 25V
Current - Continuous Drain (Id) @ 25°C	5.5A Tc
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	45ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	45 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	5.5A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
Dual Supply Voltage	600V
Nominal Vgs	4 V
Height	9.19mm
Length	10.16mm
Width	4.7mm
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free