FQPF8N60CT

new-10%

Manufacturer part number:FQPF8N60CT

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 600V 7.5A TO-220F

Case Package:SOT-23

Datasheet:FQPF8N60CT Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Weight	2.27g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2007
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	48W Tc
Element Configuration	Single
Power Dissipation	48W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.2 Ω @ 3.75A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1255pF @ 25V
Current - Continuous Drain (Id) @ 25°C	7.5A Tc
Gate Charge (Qg) (Max) @ Vgs	36nC @ 10V
Rise Time	60.5ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	64.5 ns
Turn-Off Delay Time	81 ns
Continuous Drain Current (ID)	6.26A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
RoHS Status	RoHS Compliant