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FSB619

FSB619

FSB619

ON Semiconductor

FSB619 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FSB619 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 30mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 50V
Max Power Dissipation 500mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 2A
Frequency 100MHz
Base Part Number FSB619
Number of Elements 1
Element Configuration Single
Power Dissipation 500mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 320mV @ 50mA, 2A
Collector Emitter Breakdown Voltage 50V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 320mV
Max Breakdown Voltage 25V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
hFE Min 300
Height 940μm
Length 2.92mm
Width 1.4mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.063757 $0.063757
500 $0.046880 $23.44
1000 $0.039067 $39.067
2000 $0.035841 $71.682
5000 $0.033496 $167.48
10000 $0.031159 $311.59
15000 $0.030135 $452.025
50000 $0.029631 $1481.55
FSB619 Product Details

FSB619 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 1A 2V DC current gain.The collector emitter saturation voltage is 320mV, giving you a wide variety of design options.When VCE saturation is 320mV @ 50mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 5V can result in a high level of efficiency.The current rating of this fuse is 2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As you can see, the part has a transition frequency of 100MHz.As a result, it can handle voltages as low as 25V volts.Maximum collector currents can be below 2A volts.

FSB619 Features


the DC current gain for this device is 200 @ 1A 2V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 320mV @ 50mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 100MHz

FSB619 Applications


There are a lot of ON Semiconductor FSB619 applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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