FZT649 Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 1A 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 300mA, 3A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.The current rating of this fuse is 3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.There is a breakdown input voltage of 25V volts that it can take.Collector current can be as low as 3A volts at its maximum.

FZT649 Features

the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 150MHz

FZT649 Applications

There are a lot of ON Semiconductor FZT649 applications of single BJT transistors.

• Inverter
• Muting
• Driver
• Interface