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2STW200

2STW200

2STW200

STMicroelectronics

2STW200 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website

SOT-23

2STW200 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 6.500007g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 130W
Base Part Number 2STW
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 130W
Transistor Application SWITCHING
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 25A
DC Current Gain (hFE) (Min) @ Ic, Vce 500 @ 10A 3V
Current - Collector Cutoff (Max) 500μA
Vce Saturation (Max) @ Ib, Ic 3.5V @ 80mA, 20A
Collector Emitter Breakdown Voltage 80V
Collector Emitter Saturation Voltage 3.5V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 1V
hFE Min 300
Max Junction Temperature (Tj) 150°C
Continuous Collector Current 25A
Height 24.45mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.12000 $3.12
30 $2.67433 $80.2299
120 $2.30517 $276.6204
510 $1.92614 $982.3314
1,020 $1.62687 $1.62687
2,520 $1.52713 $3.05426
5,010 $1.51050 $7.5525
2STW200 Product Details

2STW200 Description


The devices are produced using planar technology and have a monolithic Darlington arrangement and "base island" layout.



2STW200 Features


  • Complementary NPN - PNP transistors

  • Monolithic Darlington configuration



2STW200 Applications


  • Automotive

  • Personal electronics

  • Communications equipment


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