VS-GT50TP60N

new-10%

Manufacturer part number:VS-GT50TP60N

Manufacturer:Vishay Semiconductor Diodes Division

Description:IGBT MOD 600V 85A 208W INT-A-PAK

Case Package:SOT-23

Datasheet:VS-GT50TP60N Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	INT-A-PAK (3 + 4)
Operating Temperature	175°C TJ
Published	2015
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	Nickel (Ni)
Max Power Dissipation	208W
Configuration	Half Bridge
Power - Max	208W
Input	Standard
Collector Emitter Voltage (VCEO)	2.1V
Max Collector Current	85A
Current - Collector Cutoff (Max)	1mA
Collector Emitter Breakdown Voltage	600V
Input Capacitance	3.03nF
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 50A
IGBT Type	Trench
NTC Thermistor	No
Input Capacitance (Cies) @ Vce	3.03nF @ 30V
RoHS Status	ROHS3 Compliant