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HGT1S14N36G3VLS

HGT1S14N36G3VLS

HGT1S14N36G3VLS

ON Semiconductor

HGT1S14N36G3VLS datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

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HGT1S14N36G3VLS Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AB
Operating Temperature -40°C~175°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Logic
Power - Max 100W
Voltage - Collector Emitter Breakdown (Max) 390V
Current - Collector (Ic) (Max) 18A
Test Condition 300V, 7A, 25Ohm, 5V
Vce(on) (Max) @ Vge, Ic 2.2V @ 5V, 14A
Gate Charge 24nC
Td (on/off) @ 25°C -/7μs
HGT1S14N36G3VLS Product Details

HGT1S14N36G3VLS Description


The HGT1S14N36G3VLS N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resister are provided in the gate circuit.



HGT1S14N36G3VLS Features


  • Logic Level Gate Drive

  • Internal Voltage Clamp

  • ESD Gate Protection

  • TJ = 175 ℃

  • Ignition Energy Capable



HGT1S14N36G3VLS Applications


  • New Energy Vehicle

  • Photovoltaic Generation

  • Wind Power Generation

  • Smart Grid


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