HGT1S7N60C3DS9A

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Manufacturer part number:HGT1S7N60C3DS9A

Manufacturer:ON Semiconductor

Description:HGT1S7N60C3DS9A datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:HGT1S7N60C3DS9A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	TO-263AB
Packaging	Tape & Reel (TR)
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Input Type	Standard
Power - Max	60W
Reverse Recovery Time	37ns
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	14A
Test Condition	480V, 7A, 50Ohm, 15V
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 7A
Gate Charge	23nC
Current - Collector Pulsed (Icm)	56A
Switching Energy	165μJ (on), 600μJ (off)

Quantity	Unit Price	Ext. Price
1	$2.09000	$2.09
500	$2.0691	$1034.55
1000	$2.0482	$2048.2
1500	$2.0273	$3040.95
2000	$2.0064	$4012.8
2500	$1.9855	$4963.75

HGT1S7N60C3DS9A Description

The MOS gated high voltage switching HGT1S7N60C3DS9A devices combine the greatest qualities of MOSFETs and bipolar transistors. These devices combine the low on-state conduction loss of a bipolar transistor with the high input impedance of a MOSFET. Between 25°C and 150°C, the significantly smaller on-state voltage loss only varies slightly. The IGBT in question is a TA49115 developmental type.