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APT50GP60B2DQ2G

APT50GP60B2DQ2G

APT50GP60B2DQ2G

Microsemi Corporation

Trans IGBT Chip N-CH 600V 150A 3-Pin(3+Tab) T-MAX

SOT-23

APT50GP60B2DQ2G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Series POWER MOS 7®
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 625W
Current Rating 150A
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 150A
Collector Emitter Breakdown Voltage 600V
Turn On Time 55 ns
Test Condition 400V, 50A, 4.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 50A
Turn Off Time-Nom (toff) 200 ns
IGBT Type PT
Gate Charge 165nC
Current - Collector Pulsed (Icm) 190A
Td (on/off) @ 25°C 19ns/85ns
Switching Energy 465μJ (on), 635μJ (off)
Gate-Emitter Thr Voltage-Max 6V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
35 $14.32514 $501.3799

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