APT50GP60B2DQ2G

new-10%

Manufacturer part number:APT50GP60B2DQ2G

Manufacturer:Microsemi Corporation

Description:Trans IGBT Chip N-CH 600V 150A 3-Pin(3+Tab) T-MAX

Case Package:SOT-23

Datasheet:APT50GP60B2DQ2G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3 Variant
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1999
Series	POWER MOS 7®
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	TIN SILVER COPPER
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	625W
Current Rating	150A
Pin Count	3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	150A
Collector Emitter Breakdown Voltage	600V
Turn On Time	55 ns
Test Condition	400V, 50A, 4.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 50A
Turn Off Time-Nom (toff)	200 ns
IGBT Type	PT
Gate Charge	165nC
Current - Collector Pulsed (Icm)	190A
Td (on/off) @ 25°C	19ns/85ns
Switching Energy	465μJ (on), 635μJ (off)
Gate-Emitter Thr Voltage-Max	6V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free