IKQ75N120CS6XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IKQ75N120CS6XKSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Through Hole
Package / Case
TO-247-3
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Series
TrenchStop™
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Input Type
Standard
Power - Max
880W
Reverse Recovery Time
440ns
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
150A
Test Condition
600V, 75A, 4 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 75A
IGBT Type
Trench Field Stop
Gate Charge
530nC
Current - Collector Pulsed (Icm)
300A
Td (on/off) @ 25°C
34ns/300ns
Switching Energy
5.15mJ (on), 2.95mJ (off)
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$18.05000
$18.05
10
$16.70800
$167.08
240
$14.33333
$3439.9992
720
$12.90865
$9294.228
IKQ75N120CS6XKSA1 Product Details
IKQ75N120CS6XKSA1 Description
IKQ75N120CS6XKSA1 is a type of High-speed soft switching TRENCHSTOP? IGBT 6 in Trench and Fieldstop technology co-packed with soft and fast recovery anti-parallel diode. It is designed based on 1200V TRENCHSTOP? IGBT 6 technology to provide best-in-class efficiency in hard switching and resonant topologies, Low EMI, as well as low gate charge QG. Easy paralleling capability can be ensured due to the positive temperature coefficient in VCEsat. Based on its specific characteristics, the IKQ75N120CS6XKSA1 IGBT is well suited for a wide range of applications, including energy storage, industrial UPS, and more.
IKQ75N120CS6XKSA1 Features
Maximum junction temperature175°C
Low EMI
Low QG
Best-in-Class efficiency in hard switching and resonant topologies