HGTG20N60C3D IGBT Description

A Generation III MOS gated high voltage switching device called the HGTG20N60C3D combines the greatest qualities of MOSFETs and bipolar transistors. These devices combine the low on-state conduction loss of a bipolar transistor with the high input impedance of a MOSFET. Between 25°C and 150°C, the significantly smaller on-state voltage loss scarcely varies somewhat. The IGBT is perfect for a variety of high voltage switching applications that operate at moderate frequencies and require minimal conduction losses, such as power supplies, drivers for solenoids, relays, and contractors, as well as AC and DC motor controllers.

HGTG20N60C3D IGBT Features

40A, 600V at TC = 25°C

Short Circuit Rated

600V Switching SOA Capability

Typical Fall Time: 140ns at 150°C

Low Conduction Loss

HGTG20N60C3D IGBT Applications

Industrial Applications

PFC Converters

Hard-Switching Applications

Inverter Applications

DC/AC Stages

TIG Welding Equipment