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NGTB50N65S1WG

  • NGTB50N65S1WG
  • NGTB50N65S1WG

NGTB50N65S1WG

NGTB50N65S1WG

ON Semiconductor

NGTB50N65S1WG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

NGTB50N65S1WG Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 36 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Input Type Standard
Power - Max 300W
Reverse Recovery Time 70ns
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 140A
Test Condition 400V, 50A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 50A
IGBT Type Trench
Gate Charge 128nC
Td (on/off) @ 25°C 75ns/128ns
Switching Energy 1.25mJ (on), 530μJ (off)
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.248850 $1.24885
10 $1.178160 $11.7816
100 $1.111472 $111.1472
500 $1.048558 $524.279
1000 $0.989206 $989.206
NGTB50N65S1WG Product Details

NGTB50N65S1WG Description

 

NGTB50N65S1WG transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes NGTB50N65S1WG MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

 

 

NGTB50N65S1WG Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

NGTB50N65S1WG Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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