Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2010
Series	GenX3™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Additional Feature	ULTRA FAST
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	250W
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation	250W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	5V
Max Collector Current	42A
Reverse Recovery Time	70 ns
Collector Emitter Breakdown Voltage	1.4kV
Voltage - Collector Emitter Breakdown (Max)	1400V
Collector Emitter Saturation Voltage	1.4kV
Turn On Time	35 ns
Test Condition	700V, 20A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	5V @ 15V, 20A
Turn Off Time-Nom (toff)	524 ns
IGBT Type	PT
Gate Charge	88nC
Current - Collector Pulsed (Icm)	108A
Td (on/off) @ 25°C	19ns/110ns
Switching Energy	1.35mJ (on), 440μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	RoHS Compliant

IXGT20N140C3H1

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