IRGS4640DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRGS4640DPBF Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
18 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2015
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
250W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Input Type
Standard
Power - Max
250W
Collector Emitter Voltage (VCEO)
1.9V
Max Collector Current
65A
Reverse Recovery Time
89 ns
Collector Emitter Breakdown Voltage
600V
Test Condition
400V, 24A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.9V @ 15V, 24A
Gate Charge
75nC
Current - Collector Pulsed (Icm)
72A
Td (on/off) @ 25°C
41ns/104ns
Switching Energy
115μJ (on), 600μJ (off)
RoHS Status
RoHS Compliant
IRGS4640DPBF Product Details
IRGS4640DPBF Description
IRGS4640DPBF manufactured by Infineon Technologies is a type of insulated gate bipolar transistor that is used to provide high efficiency in a wide range of applications. Excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient. Low VCE(ON) and switching losses enable it to provide high efficiency in a wide range of applications. Improved Reliability can be ensured due to rugged hard switching performance and higher power capability.