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IRGS4640DPBF

IRGS4640DPBF

IRGS4640DPBF

Infineon Technologies

IRGS4640DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGS4640DPBF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2015
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 250W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Input Type Standard
Power - Max 250W
Collector Emitter Voltage (VCEO) 1.9V
Max Collector Current 65A
Reverse Recovery Time 89 ns
Collector Emitter Breakdown Voltage 600V
Test Condition 400V, 24A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 24A
Gate Charge 75nC
Current - Collector Pulsed (Icm) 72A
Td (on/off) @ 25°C 41ns/104ns
Switching Energy 115μJ (on), 600μJ (off)
RoHS Status RoHS Compliant
IRGS4640DPBF Product Details

IRGS4640DPBF Description


IRGS4640DPBF manufactured by Infineon Technologies is a type of insulated gate bipolar transistor that is used to provide high efficiency in a wide range of applications. Excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient. Low VCE(ON) and switching losses enable it to provide high efficiency in a wide range of applications. Improved Reliability can be ensured due to rugged hard switching performance and higher power capability.



IRGS4640DPBF Features


Square RBSOA

Positive VCE(ON) temperature coefficient

Low VCE(ON) and switching losses

Maximum junction temperature 175°C

5μs short circuit SOA



IRGS4640DPBF Applications


Industrial motor drives

Inverter

UPS

Welding 


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