HGTG30N60B3D

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Manufacturer part number:HGTG30N60B3D

Manufacturer:ON Semiconductor

Description:HGTG30N60B3D datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:HGTG30N60B3D Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE, NOT REC (Last Updated: 2 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.39g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOW CONDUCTION LOSS
HTS Code	8541.29.00.95
Voltage - Rated DC	600V
Max Power Dissipation	208W
Current Rating	60A
Base Part Number	HGTG30N60
Number of Elements	1
Element Configuration	Single
Power Dissipation	208W
Input Type	Standard
Turn On Delay Time	36 ns
Transistor Application	POWER CONTROL
Rise Time	25ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	137 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	60A
Reverse Recovery Time	55 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.45V
Turn On Time	56 ns
Test Condition	480V, 30A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 30A
Turn Off Time-Nom (toff)	365 ns
Gate Charge	170nC
Current - Collector Pulsed (Icm)	220A
Td (on/off) @ 25°C	36ns/137ns
Switching Energy	550μJ (on), 680μJ (off)
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free