HGTP7N60A4D Description

The HGTP7N60A4D devices combine the greatest qualities of MOSFETs and bipolar transistors in a MOS-gated high voltage switching device. These devices combine the low on-state conduction loss of a bipolar transistor with the high input impedance of a MOSFET. Between 25°C and 150°C, the significantly smaller on-state voltage loss scarcely varies slightly.

HGTP7N60A4D Features

? Operation At >100kHz At 390V, 7A

? Operation At 200kHz At 390V, 5A

? Capability for 600V Switching SOA

? Typical Fall Time.......................................

? Minimal Conductance Loss

HGTP7N60A4D Applications

Switching applications