The ground-breaking UltraFET manufacturing technique is used to create these N-Channel power MOSFETs. The lowest on-resistance per silicon area is achieved using this cutting-edge process technology, producing exceptional performance. This device has a very low reverse recovery time and stored charge, and it can sustain high energy in avalanche mode. It was created for use in situations where power economy was crucial, including switching converters, switching regulators, motor and relay drivers, low-voltage bus switches, and power management in portable and battery-powered goods.