SIHB24N65ET1-GE3

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Manufacturer part number:SIHB24N65ET1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 650V 24A TO263

Case Package:SOT-23

Datasheet:SIHB24N65ET1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2018
Series	E
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	250W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	145m Ω @ 12A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2740pF @ 100V
Current - Continuous Drain (Id) @ 25°C	24A Tc
Gate Charge (Qg) (Max) @ Vgs	122nC @ 10V
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
RoHS Status	Non-RoHS Compliant