HUF75542P3

new-10%

Manufacturer part number:HUF75542P3

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) N-Channel Tube 14m Ω @ 75A, 10V ±20V 2750pF @ 25V 180nC @ 20V TO-220-3

Case Package:SOT-23

Datasheet:HUF75542P3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Factory Lead Time	9 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	1.8g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	UltraFET™
Published	2002
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	80V
Technology	MOSFET (Metal Oxide)
Current Rating	75A
Number of Elements	1
Power Dissipation-Max	230W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	230W
Case Connection	DRAIN
Turn On Delay Time	12.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	14m Ω @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2750pF @ 25V
Current - Continuous Drain (Id) @ 25°C	75A Tc
Gate Charge (Qg) (Max) @ Vgs	180nC @ 20V
Rise Time	117ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	80 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	75A
Threshold Voltage	4V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	80V
Height	6.35mm
Length	31.75mm
Width	6.35mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free