HUF75639S3S

new-10%

Manufacturer part number:HUF75639S3S

Manufacturer:ON Semiconductor

Description:HUF75639S3S datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:HUF75639S3S Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	1.31247g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	UltraFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	56A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	200W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	200W
Case Connection	DRAIN
Turn On Delay Time	15 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	25m Ω @ 56A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	56A Tc
Gate Charge (Qg) (Max) @ Vgs	130nC @ 20V
Rise Time	60ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	56A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.025Ohm
Drain to Source Breakdown Voltage	100V
Height	4.83mm
Length	10.67mm
Width	9.65mm
RoHS Status	RoHS Compliant
Lead Free	Lead Free