SI7615ADN-T1-GE3

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SI7615ADN-T1-GE3

Manufacturer part number:SI7615ADN-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 35A 1212-8S

Case Package:SOT-23

Datasheet:SI7615ADN-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	4.4mOhm
Terminal Finish	Matte Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
JESD-30 Code	S-PDSO-C5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.7W Ta 52W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.7W
Case Connection	DRAIN
Turn On Delay Time	13 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.4m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5590pF @ 10V
Current - Continuous Drain (Id) @ 25°C	35A Tc
Gate Charge (Qg) (Max) @ Vgs	183nC @ 10V
Rise Time	40ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 10V
Vgs (Max)	±12V
Fall Time (Typ)	26 ns
Turn-Off Delay Time	85 ns
Continuous Drain Current (ID)	-22.1A
Threshold Voltage	-400mV
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	35A
Drain to Source Breakdown Voltage	-20V
Avalanche Energy Rating (Eas)	20 mJ
Max Junction Temperature (Tj)	150°C
Height	1.12mm
Length	3.4mm
Width	3.4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free