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IXTF1N450

IXTF1N450

IXTF1N450

IXYS

MOSFET (Metal Oxide) N-Channel Tube 85 Ω @ 50mA, 10V ±20V 1730pF @ 25V 40nC @ 10V 4500V i4-Pac™-5 (3 Leads)

SOT-23

IXTF1N450 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case i4-Pac™-5 (3 Leads)
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Reach Compliance Code unknown
Number of Elements 1
Power Dissipation-Max 160W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 165W
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 85 Ω @ 50mA, 10V
Vgs(th) (Max) @ Id 6.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1730pF @ 25V
Current - Continuous Drain (Id) @ 25°C 900mA Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time 60ns
Drain to Source Voltage (Vdss) 4500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 127 ns
Turn-Off Delay Time 58 ns
Continuous Drain Current (ID) 900mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.9A
Drain-source On Resistance-Max 80Ohm
Drain to Source Breakdown Voltage 4.5kV
Pulsed Drain Current-Max (IDM) 3A
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $44.03000 $44.03
25 $38.08000 $952
100 $35.70000 $3570
IXTF1N450 Product Details

IXTF1N450 Overview


A device's maximum input capacitance is 1730pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 900mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=4.5kV, and this device has a drain-to-source breakdown voltage of 4.5kV voltage.Its drain current is 0.9A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 58 ns.Its maximum pulsed drain current is 3A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 4500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTF1N450 Features


a continuous drain current (ID) of 900mA
a drain-to-source breakdown voltage of 4.5kV voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 3A.
a 4500V drain to source voltage (Vdss)


IXTF1N450 Applications


There are a lot of IXYS
IXTF1N450 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters

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