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IRF630BTSTU_FP001

IRF630BTSTU_FP001

IRF630BTSTU_FP001

ON Semiconductor

MOSFET N-CH 200V 9A TO-220

SOT-23

IRF630BTSTU_FP001 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2002
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 72W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 400mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 720pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.845288 $1.845288
10 $1.740838 $17.40838
100 $1.642300 $164.23
500 $1.549340 $774.67
1000 $1.461641 $1461.641

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