FDH44N50

new-10%

Manufacturer part number:FDH44N50

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) N-Channel Tube 120m Ω @ 22A, 10V ±30V 5335pF @ 25V 108nC @ 10V TO-247-3

Case Package:SOT-23

Datasheet:FDH44N50 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Factory Lead Time	7 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.39g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Resistance	120mOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Current Rating	44A
Number of Elements	1
Power Dissipation-Max	750W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	750W
Case Connection	DRAIN
Turn On Delay Time	16 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	120m Ω @ 22A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5335pF @ 25V
Current - Continuous Drain (Id) @ 25°C	44A Tc
Gate Charge (Qg) (Max) @ Vgs	108nC @ 10V
Rise Time	84ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	79 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	44A
Threshold Voltage	3.15V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	500V
Dual Supply Voltage	500V
Nominal Vgs	3.15 V
Height	20.82mm
Length	15.87mm
Width	4.82mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free