IRL530A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
IRL530A Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2002
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
62W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
120mOhm @ 7A, 5V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
755pF @ 25V
Current - Continuous Drain (Id) @ 25°C
14A Tc
Gate Charge (Qg) (Max) @ Vgs
24nC @ 5V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
5V
Vgs (Max)
±20V
IRL530A Product Details
IRL530A Description
Power MOSFETIRL530A is a special type of metal oxide semiconductor field effect transistor. It is specially designed to deal with high-level power. The power MOSFET adopts V configuration structure.