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IRL530A

IRL530A

IRL530A

ON Semiconductor

IRL530A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

IRL530A Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2002
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 62W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 120mOhm @ 7A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 755pF @ 25V
Current - Continuous Drain (Id) @ 25°C 14A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 5V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±20V
IRL530A Product Details

IRL530A    Description

 

Power MOSFET IRL530A is a special type of metal oxide semiconductor field effect transistor. It is specially designed to deal with high-level power. The power MOSFET adopts V configuration structure.

 

IRL530A    Features


Avalanche Rugged Technology

 Rugged Gate Oxide Technology

 Lower Input Capacitance

 Improved Gate Charge

 Extended Safe Operating Area

 Lower Leakage Current : 10 μA (Max.) @ VDS = 100V

 Lower RDS(ON) : 0.101Ω (Typ.)

 

IRL530A   Applications


 high-level power


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