CSD13380F3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website
SOT-23
CSD13380F3 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mounting Type
Surface Mount
Package / Case
3-SMD, No Lead
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
FemtoFET™
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Terminal Position
BOTTOM
Base Part Number
CSD13380
Number of Elements
1
Power Dissipation-Max
500mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
76m Ω @ 400mA, 4.5V
Vgs(th) (Max) @ Id
1.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
156pF @ 6V
Current - Continuous Drain (Id) @ 25°C
3.6A Ta
Gate Charge (Qg) (Max) @ Vgs
1.2nC @ 4.5V
Drain to Source Voltage (Vdss)
12V
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Vgs (Max)
8V
Drain Current-Max (Abs) (ID)
2.1A
Drain-source On Resistance-Max
0.092Ohm
DS Breakdown Voltage-Min
12V
Feedback Cap-Max (Crss)
12.5 pF
Length
690μm
Width
600μm
Thickness
345μm
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.08000
$0.24
6,000
$0.07200
$0.432
15,000
$0.06400
$0.96
CSD13380F3 Product Details
CSD13380F3 Description
This 63-m, 12-V N-Channel FemtoFETTM MOSFET has been designed and tuned to fit into a variety of handheld and mobile applications. This technology is capable of replacing traditional small signal MOSFETs while reducing the footprint size significantly.