RZM001P02T2L

new-10%

Manufacturer part number:RZM001P02T2L

Manufacturer:ROHM Semiconductor

Description:MOSFET P-CH 20V 0.1A VMT3

Case Package:SOT-23

Datasheet:RZM001P02T2L Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-723
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Published	2005
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-F3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Number of Channels	1
Power Dissipation-Max	150mW Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	150W
Turn On Delay Time	46 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.8 Ω @ 100mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	15pF @ 10V
Current - Continuous Drain (Id) @ 25°C	100mA Ta
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.2V 4.5V
Vgs (Max)	±10V
Turn-Off Delay Time	325 ns
Continuous Drain Current (ID)	100mA
Gate to Source Voltage (Vgs)	10V
Drain to Source Breakdown Voltage	-20V
Max Junction Temperature (Tj)	150°C
Height	550μm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free